ksc5402d/ksc5402dt ? npn silicon tran sistor, planar silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5402d/ksc5402dt rev. c0 1 december 2009 ksc5402d/ksc5402dt npn silicon transistor, planar silicon transistor features ? high voltage high speed power switch application ? wide safe operating area ? built-in free wheeling diode ? suitable for electronic ballast application ? small variance in storage time ? two package choices; d-pak or to-220 absolute maximum ratings t a =25 c unless otherwise noted * pulse test: pulse width=5ms, duty cycle< 10% thermal characteristics t a =25 c unless otherwise noted * mounted on 1? square pc b (fr4 ro g-10 material) symbol parameter value units v cbo collector-base voltage 1000 v v ceo collector-emitter voltage 450 v v ebo emitter-base voltage 12 v i c collector current (dc) 2 a i cp *collector current (pulse) 5 a i b base current (dc) 1 a i bp *base current (pulse) 2 a p c power dissipation(t c =25 c) : d-pak* : to-220 30 50 w w t j junction temperature 150 c t stg storage temperature - 65 to 150 c symbol parameter rating units to-220 d-pak r jc thermal resistance junction to case 2.5 4.17* c/w r ja junction to ambient 62.5 50 c/w t l maximum lead temperature for soldering purpose ; 1/8? from case for 5 seconds 270 270 c c b e equivalent circuit 1 1.base 2.collector 3.emitter 1 d-pak to-220
ksc5402d/ksc5402dt ? npn silicon tran sistor, planar silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5402d/ksc5402dt rev. c0 2 electrical characteristics t a =25 c unless otherwise noted symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =1ma, i e =0 1000 1090 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 450 525 v bv ebo emitter-base breakdown voltage i e =1ma, i c =0 12 14 v i ces collector cut-off current v ces =1000v, i eb =0 t a =25 c0.03100 a t a =125 c1.2500 a i ceo collector cut-off current v ce =450v, v b =0 t a =25 c0.3100 a t a =125 c15500 a i ebo emitter cut-off current v eb =10v, i c =0 0.01 100 a h fe dc current gain v ce =1v, i c =0.4a t a =25 c14 29 t a =125 c8 17 v ce =1v, i c =1a t a =25 c6 9 t a =125 c4 6 v ce (sat) collector-emitter saturation voltage i c =0.4, i b =0.04a t a =25 c 0.25 0.6 v t a =125 c0.41.0v i c =1a, i b =0.2a t a =25 c 0.3 0.75 v t a =125 c 0.65 1.2 v v be (sat) base-emitte r saturation voltage i c =0.4a, i b =0.04a t a =25 c 0.78 1.0 v t a =125 c 0.65 0.9 v i c =1a, i b =0.2a t a =25 c 0.85 1.1 v t a =125 c 0.75 1.0 v c ib input capacitance v eb =8v, i c =0, f=1mhz 330 500 pf c ob output capacitance v cb =10v, i e =0, f=1mhz 35 100 pf f t current gain bandwidth product i c =0.5a, v ce =10v 11 mhz v f diode forward voltage i f =1a t a =25 c 0.86 1.5 v i f =0.2a t a =25 c 0.75 1.2 v t a =125 c0.6 v i f =0.4a t a =25 c0.81.3v t a =125 c0.65 v
ksc5402d/ksc5402dt ? npn silicon tran sistor, planar silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5402d/ksc5402dt rev. c0 3 electrical characteristics (continued) t a =25 c unless otherwise noted symbol parameter test condition min. typ. max. units t fr diode froward recvery time (di/dt=10a/ s) i f =0.2a i f =0.4a i f =1a 540 520 480 ns ns ns v ce (dsat) dynamic saturation voltage i c =0.4a, i b1 =40ma v cc =300v @ 1 s7.5v @ 3 s2.5v i c =1a, i b1 =200ma v cc =300 @ 1 s11.5v @ 3 s1.5v resistive load switching (d.c < 10%, pulse width=20 s) t on turn on time i c =1a, i b1 =200ma, i b2 =150ma, v cc =300v, r l = 300 t a =25 c 110 150 ns t a =125 c135 ns t off turn off time t a =25 c 0.95 1.25 s t a =125 c1.4 s inductive load switching (v cc =15v) t stg storage time i c =0.4a, i b1 =40ma, i b2 =200ma, vz=300v, l c =200h t a =25 c0.560.65 s t a =125 c0.7 s t f fall time t a =25 c 60 175 ns t a =125 c75 ns t c cross-over time t a =25 c 90 175 ns t a =125 c90 ns t stg storage time i c =0.8a, i b1 =160ma, i b2 =160ma, vz=300v, l c =200h t a =25 c2.75 s t a =125 c3 s t f fall time t a =25 c 110 175 ns t a =125 c180 ns t c cross-over time t a =25 c 125 350 ns t a =125 c185 ns t stg storage time i c =1a, i b1 =200ma, i b2 =500ma, v z =300v, l c =200 h t a =25 c1.11.2 s t a =125 c1.35 s t f fall time t a =25 c 105 150 ns t a =125 c75 ns t c cross-over time t a =25 c 125 150 ns t a =125 c100 ns
ksc5402d/ksc5402dt ? npn silicon tran sistor, planar silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5402d/ksc5402dt rev. c0 4 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. dc current gain figure 4. collector-emitter sa turation voltage figure 5. base-emitter saturation voltage fig ure 6. collector-emitter saturation voltage 0123456 0.0 0.5 1.0 1.5 2.0 2.5 3.0 900ma i b = 0 500ma 600ma 700ma 800ma 400ma 200ma 300ma i b = 1a 100ma i c [a], collector current v ce [v], collector-emitter voltage 1e-3 0.01 0.1 1 1 10 100 t j =25 t j =125 v ce = 1v h fe , dc current gain i c [a], collector current 1e-3 0.01 0.1 1 1 10 100 t j =25 t j =125 v ce = 6v h fe , dc current gain i c [a], collector current 1e-3 0.01 0.1 1 0.1 1 10 t j =25 t j =125 i c = 5 i b v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 0.1 1 10 t j =25 t j =125 i c = 5 i b v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 0.1 1 10 t j =25 t j =125 i c = 10 i b v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current
ksc5402d/ksc5402dt ? npn silicon tran sistor, planar silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5402d/ksc5402dt rev. c0 5 typical performance characteristics figure 7. base-emitter satu ration voltage figure 8. collector output capacitance figure 9. typical collector saturation region figure 10. forward recovery time figure 11. diode forward voltage figure 12. resistive switching time, t on 1e-3 0.01 0.1 1 0.1 1 10 t j =25 t j =125 i c = 10 i b v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 1 10 100 10 100 1000 c ob f=1mhz c ib capacitance [pf] reverse voltage [v] 1e-3 0.01 0.1 1 0.0 0.5 1.0 1.5 2.0 t j =25 2.0a 1.5a 0.4a 1.0a i c =0.2a collector voltage [v] i c [a], collector current 0.0 0.5 1.0 450 500 550 t fr [ns], forward recovery time i f [a], forward current 0.01 0.1 1 0.1 1 10 t j =25 t j =125 v fd [v], voltage i fd [a], current 0.4 0.6 0.8 1.0 1.2 1.4 100 200 300 t j =25 t j =125 i c =5i b1 =2i b2 v cc =300v pw=40 s t on [ns], time i c [a], collector current (continued)
ksc5402d/ksc5402dt ? npn silicon tran sistor, planar silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5402d/ksc5402dt rev. c0 6 typical performance characteristics figure 13. resistive switching time, t off figure 14. inductive switching time, t si figure 15. inductive switching time, t fi figure 16. inductive switching time, t c figure 17. inductive switching time, t si figure 18. inductive switching time, t fi 0.4 0.6 0.8 1.0 1.2 1.4 1.0 1.5 2.0 i c =5i b1 =2i b2 v cc =300v pw=40 s t j =25 t j =125 t off [ s], time i c [a], collector current 0.40.60.81.01.21.4 550 600 650 700 750 800 850 t j =25 t j =125 i c =10i b1 =2i b2 v cc =15v v z =300v l c =200 h t si [ns], time i c [a], collector current 0.4 0.6 0.8 1.0 1.2 1.4 50 60 70 80 90 100 t j =25 t j =125 i c =10i b1 =2i b2 v cc =15v v z =300v l c =200 h t fi [ns], time i c [a], collector current 0.40.60.81.01.21.4 60 70 80 90 100 110 120 130 t j =25 t j =125 i c =10i b1 =2i b2 v cc =15v v z =300v l c =200 h t c [ns], time i c [a], collector current 0.4 0.6 0.8 1.0 1.2 1.4 20 25 30 t j =25 t j =125 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200 h t si [ s], time i c [a], collector current 0.40.60.81.01.21.4 50 100 150 200 250 300 350 400 450 t j =25 t j =125 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200 h t fi [ns], time i c [a], collector current (continued)
ksc5402d/ksc5402dt ? npn silicon tran sistor, planar silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5402d/ksc5402dt rev. c0 7 typical performance characteristics figure 19. inductive switching time, t c figure 20. inductive switching time, t si figure 21. inductive switching time, t fi figure 22. inductive switching time, t c figure 23. forward bias safe oper ating area figure 24. power derating 0.40.60.81.01.21.4 50 100 150 200 250 300 350 400 450 t j =25 t j =125 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200 h t c [ns], time i c [a], collector current 0.40.60.81.01.21.4 0.6 0.8 1.0 1.2 1.4 1.6 t j =25 t j =125 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200 h t si [ s], time i c [a], collector current 0.40.60.81.01.21.4 40 60 80 100 120 140 160 t j =25 t j =125 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200 h t fi [ns], time i c [a], collector current 0.40.60.81.01.21.4 60 80 100 120 140 160 180 200 t j =25 t j =125 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200 h t c [ns], time i c [a], collector current 10 100 1000 0.01 0.1 1 10 1 s 10 s 50 s dc 1ms 5ms i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 0 10 20 30 40 p c [w], power dissipation t c [ ], case temperature (continued)
ksc5402d/ksc5402dt ? npn silicon tran sistor, planar silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5402d/ksc5402dt rev. c0 8 physical dimension 4.50 0.2 0 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.1 0 ?.0 5 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters
ksc5402d/ksc5402dt ? npn silicon tran sistor, planar silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com ksc5402d/ksc5402dt rev. c0 9 physical dimension (continued) d-pak dimensions in millimeters
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